太阳成(122cc·认证集团)官网-Macau App Station

The CMS6D180 features two fixed voltage outputs: VREG12V and VREG5V. VREG12V has a load capacity of 60mA, providing power to the internal VREG5V and the gate driver. VREG5V has a load capacity of 30mA and can power the MCU and its peripherals.

The CMS6D180 includes a three-phase medium-voltage high-speed gate driver IC, which controls the high-side driver output (HO) and low-side driver output (LO) via input signals (HIN, LIN). The internal 360ns dead-time is the minimum dead-time, and when the microcontroller’s output signal dead-time is greater than the internal dead-time, the actual dead-time is the value set by the microcontroller. The internal VREG12V and VBS undervoltage (UVLO) protection functions prevent the system from turning on the external power transistors at low drive voltages.

The CMS6D180 also features undervoltage protection, over-temperature protection, bus voltage divider output, current-limiting protection, and an enable shutdown function to achieve zero standby current.

> Enable shutdown function to achieve zero standby current.

> 5V voltage regulator output, with a load capacity of 30mA, including current-limiting protection.

> 12V voltage regulator output, with a load capacity of 60mA, including current-limiting protection.

> Floating offset voltage: +200V.

> Internal shoot-through function to prevent interference.

> Internal 360ns dead-time.

> High-side and low-side channel matching.

> High-side output is in phase with high-side input, and low-side output is in phase with low-side input.

> 3.3V/5V input logic compatibility.

> Peak output current: 0.82A at 12V, with a 3.3nF load, rise time of 70ns.

> Peak sink current: 0.93A at 12V, with a 3.3nF load, fall time of 50ns.

> Internal VREG12V and VBS undervoltage protection.

> Internal VBAT undervoltage function, with undervoltage thresholds of 5.3V/4.6V. Undervoltage protection includes a 16ms filter to prevent momentary disturbances from causing output shutdown.

> Internal low-voltage protection function for the key input, with external Zener diode to select the target undervoltage point.

> Internal over-temperature protection, with temperature thresholds of 160°C/140°C.

> Internal power divider output module, with a division ratio of 1/11.01.

Electrostatic discharge immunity: 2000V (HBM), 750V (CDM).